Integratable hall element

ABSTRACT

In an integrable Hall element, which includes a semiconductor layer of a single conductive type, a plurality of current electrodes adapted for being connected to an energy source, and wherein at least one current electrode and two sensor electrodes are located on a surface of the Hall element, and the one current electrode has a first connecting contact forming a first energy source pole, the improvement consists in the one current electrode being approximately located in the center of a line connecting the sensor electrodes. The remaining current electrodes are distributed current electrodes which have a second connecting contact, and a second energy source pole is formed by the distributed current electrodes; the distributed electrodes are so located with respect to the one current electrode so that all currents flowing between the one electrode and the distributed electrodes form a resultant current vector extending in the vicinity of the one current electrode substantially at right angles to the surface of the semiconductor layer.

This is a continuation of application Ser. No. 946,149, filed Dec. 19,1986, now U.S. Pat. No. 4,782,375 which is a continuation of abandonedapplication Ser. No. 675,717, filed Nov. 28, 1984.

BACKGROUND OF THE INVENTION

The invention relates to an integratable Hall element which comprises asemi-conductor layer of a single conductivity type, on whose surfacethere are disposed two sensor electrodes and at least one currentelectrode of several current electrodes, and wherein the currentelectrodes serve to be connected to an energy source and the one currentelectrode is equipped with a first connectiing contact which forms afirst supply pole.

The Hall element can be used as a magnetic field sensor, for example inan electricity counter, or in an output meter for measuring the currentconsumed, which, as is known, is proportional to the magnetic fieldgenerated by the current.

From U.S. Pat. No. 4,253,107 there has become known an integrated Hallelement, which measures a magnetic field acting at right angles to itssurface, as can be ascertained, for example from column 1, lines 14through 20 and from FIG. 2.

Furthermore there are known integrated magnetic field sensors, forexample magnetic diodes and magnetic transistors, which measure amagnetic field acting parallel to its surface. Their construction ismore complicated than that of Hall elements. Furthermore they are rathertemperature-sensitive and in principle have a non-linear characteristicline. They are further sensitive with respect to shot noise. Amagneto-transistor of this type is, for example, known from IEEEElectron Device letters, Volume EDL4, No 3, Mar. 1983, pages 51 to 53"An investigation of the sensitivity of lateral magneto-transistors" R.S. Popovic et al.

SUMMARY OF THE INVENTION

It is an object of the invention to implement a magnetic field sensorfor measurement of a magnetic field acting parallel to its surface,which may be part of a conventional integrated circuit in standardbipolar or standard CMOS technology, which has a sensitivity of theorder of magnitude of at least 1 Volt/(mA. Tesla), instead of thehitherto available approximately 200 mV/(mA. Tesla), which operatesaccording to the Hall effect principle, and therefore is a simpleunipolar construction element with all advantages thereof.

The aforesaid object is realized by an integratable Hall element, whichcomprises a semiconductor layer of a single conductivity type, on whosesurface there are arranged two sensor electrodes and at least a firstcurrent electrode of several current electrodes, wherein the currentelectrodes are connected to an energy source, and the first currentelectrode has a connecting contact forming a first supply pole; theimprovement comprises in the first current electrode being disposedapproximately in the center between the sensor electrodes andapproximately on a straight line connecting the sensor electrodes, andby distributed current electrodes, which have a connecting contact,forming the second supply pole, and which are so arranged that allcurrents operatively formed between the current electrodes form avectorially resultant current, which extends in the vicinity of thefirst current electrode substantially at right angles to the surface ofthe semiconductor layer.

BRIEF DESCRIPTION OF THE DRAWING

For a full understanding of the nature and objects of the invention,reference should be had to the following detailed description, taken inconnection with the accompanying drawing in which:

FIG. 1 is a perspective view of a Hall element of the prior art;

FIG. 2 is a cross-section of a modified Hall element,

FIG. 3 is a cross section of a further modified Hall element,

FIG. 4 is a cross section of a Hall element according to FIG. 3, inwhich a semiconductor layer of an integrated circuit is built-in;

FIG. 5 is a schematic illustration of the current distribution incross-section of a Hall element having a cylindrically shaped currentelectrode,

FIG. 6 is a schematic representation of the current distribution in aplan view of the Hall element according to FIG. 5,

FIG. 7 is a schematic representation of the current distribution incross section of a Hall element having a hemispherical currentelectrode,

FIG. 8 is a schematic representation of the current distribution in planview of the Hall element according to FIG. 7,

FIG. 9 is a plan view of a current electrode disposed approximately inaxial symmetry with respect to a straight line,

FIG. 10 is a plan view of a current electrode disposed approximatelysymmetrically with respect to a plane surface,

FIG. 11 is a cross-section of an integratable Hall element havingdistributed and approximately point-shaped current electrodes,

FIG. 12 is a schematic representation in cross-section of the currentdistribution of a Hall element according to FIG. 11,

FIG. 13 is a schematic represenation in plan view of the currentdistribution of a Hall element according to FIG. 11,

FIG. 14 is a perspective view of one-half of an integratable Hallelement using CMOS technology,

FIG. 15 is a schematic representation of the current distribution incross-section of a Hall element according to FIG. 14 in the absence ofany equipotential diffusion layer,

FIG. 16 is a schematic representation of the current distribution inplan view of a Hall element according to FIG. 15,

FIG. 17 is a schematic representation of the current distribution incross-section of a Hall element according to FIG. 14 in the absence ofany insulating layer, and in the absence of any distributed point-shapedcurrent electrodes,

FIG. 18 is a schematic representation of the current distribution inplan view of a Hall element according to FIG. 17,

FIG. 19 is a schematic representation of the current distribution incross-section of a Hall element according to FIG. 14 in the absence ofany distributed point-shaped current electrodes,

FIG. 20 is a schematic representation of the current distribution inplan view of the Hall element according to FIG. 19,

FIG. 21 is a schematic circuit in conjunction with an integratable Hallelement according to FIG. 14,

FIG. 22 is a perspective view of one-half of an integratable Hallelement in bipolar technology,

FIG. 23 is a schematic representation of the current distribution incross-section of a Hall element according to FIG. 2 in the absence ofdistributed point-shaped current electrodes, and

FIG. 24 is a schematic representation of the current distribution inplan view of a Hall element according to FIG. 23.

In all Figs of the drawing identical reference numerals denoterespective identical parts.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The known Hall element shown in FIG. 1 comprises a smemiconductorcrystal 1 in the shape of a right-angled parallel-epipede, and whererespective opposite sides each form a pair of sides. The sides of thefirst side pair are formed with respective current connectors C1 and C2,while the sides of a second side pair are equipped with respectivesensor connectors S1 and S2. A magnetic field H which is to be measuredextends parallel to the thickness of the Hall element, and consequentlyat right angles to the third side pair. The thickness of the Hallelement is denoted by the value t. It will be assumed that allconnection points of the current connectors C1 and C2, as well as thoseof the sensor connectors S1 and S2 are in a common plane.

In what follows it will be assumed that the connecting points of thecurrent connectors C1, C2, S1 and S2 may not only be point-connectors,but may also be shaped in the form of a surface. They will therefore bedenoted generally as current electrodes or sensor electrodes, and therespective connecting points with the associated current connectors orsensor connectors C1, C2, S1, or S2 will be denoted as connectingcontacts.

Each Hall element includes therefore a first current electrode 2provided with a first current connector C1, and a first currentconnecting contact, a second current electrode 3 provided with a secondcurrent connector C2, and a second current connecting contact, a firstsensor electrode 4 formed with a first sensor connector S1 and a firstsensor connecting contact, and a second sensor electrode 5 formed with asecond sensor connector S2, and a second sensor connecting contact.

The current electrodes 2 and 3 serve for being connected to a currentsource, and wherein the first current connecting contact forms a firstcurrent pole. The second current connecting contact, and optionallyfurther current connecting contacts are connected at least through oneelectrical connection, which conducts more or less well, to a secondsupply pole.

The connecting contacts need not be disposed in the center of therespective electrode surfaces.

In what follows it will be assumed that the surfaces of the firstcurrent electrode 2, and those of both sensor electrodes 4 and 5 arevery small, and that in a first approximation they can be assumed to bepoint-shaped and be disposed at the respective surface centers, whilethe second electrode 3 shown in FIGS. 2 and 3 covers the entire surfaceof the associated side of the whole element.

The modified Hall element of FIG. 2 corresponds approximately to theHall element of FIG. 1, except that here the sides of the third sidepair have the form of respective annular segments, so that in theillustrated cross-section the sides of the first side pair have theshape of concentric arcs, while the sides of the second side pair are nolonger parallel but are radii in the cross-section shown, which subtenda center angle alpha with one another. The magnetic field H to bemeasured therefore acts both in FIG. 2, as well in the following FIGS. 3and 4 at right angles to the plane of the paper, for example from thefront to the rear.

The further modified Hall element of FIG. 3 corresponds to the Hallelement of FIG. 2, in which the center angle alpha has a value of 180degrees, so that in the cross-section shown it forms the shape of asemicircle. The cross-section of that side of the first side pair, whichis formed with a current connector C1, is then reduced to the centerpoint A of the semicircle.

In FIG. 4 the modified Hall element shown in FIG. 3 is disposed on thesurface of a semiconductor layer 6 of a single conductive type P or N insuch a manner, that the diameter of the semi-circle, which is formedwith the approximately point-shaped sensor electrodes 4 and 5, as wellas with the approximately point-shaped first current electrode 2, isdisposed on the surface of the semiconductor layer 6.

In FIGS. 2 and 3 the surface-like second current electrode 3 is formedwith a single current-connecting contact disposed approximately in thecenter of its surface for the second current connector C2. The secondcurrent electrode 3 can, however, also be equipped with severalcurrent-connecting contacts. If the Hall element is used in anintergrated circuit, then it is advantageous to dispose thiscurrent-connecting contact of the second current electrode 3, as isillustrated in FIG. 4, directly on the surface of the semiconductorlayer 6 of the integrated circuit. In that case all connecting contactsof the Hall element are disposed on the surface of the integratedcircuit. In FIG. 4 the presence of only two current-connecting contactsof the second current electrode 3 has been assumed, which are formedwith respective current connectors C'2 and C"2.

The first current electrode 2 is disposed as shown in FIGS. 3 and 4 atleast approximately in the center between the sensor electrodes 4 and 5,and at least approximately along a straight line connecting the sensorelectrodes 4 and 5. The part of the semiconductor layer 6, which isdisposed below the first current electrode 2 and both sensor electrodes4 and 5 forms the active portion 7 of the Hall element.

The surface of the second current electrode 3 has, as seen in FIGS. 3and 4, a relatively ideal cylindrical shape with a semicircularcross-section. Based on the assumption, that the first current electrode2 has a very short longitudinal shape in a surface-plane which extendsat right angles to the semicircular cross-section, that the height ofthe cylindrically shaped second current electrode 3 is equal to thelength of the first current electrode 2, and that during operationelectrical currents pass from the second current electrode 3 to thefirst current electrode 2, distribution of the currents within the Hallelement can be seen from FIGS. 5 and 6. As seen in cross-section, allcurrents according to FIG. 5 pass radially symmetrically from thecylindrically shaped second current electrode 3 to the first currentelectrode 2. As seen in plan view, however, all currents, according toFIG. 3, pass along a thin disc at right angles to the second currentelectrode 2. In that case both sensor electrodes 4 and 5 are eachpreferably longitudinally shaped, and each has an length equal to thatof the first current electrode 2.

The current distribution shown in cross-section in FIG. 7 of a Hallelement having a hemispherical second current electrode is identicalwith the current distribution shown in FIG. 5; the associate currentdistribution in plan view, shown in FIG. 8, is, however, symmetricallyradial, namely all currents pass in the plan view of FIG. 8 radiallyfrom the second current electrode 3 to the first current electrode 2.

The second current electrode 3 shown in FIG. 9 is arranged to beapproximately axially symmetrical to a straight line, which in turnpasses through the assumed point-shaped first current electrode 2 atright angles to the surface of the semiconductor layer 6, namely theplan view of the second current electrode 3 shown in FIG. 9 is arrangedin point symmetry with respect to the first current electrode 2.

The second current electrode 3 shown in FIG. 10 is disposedapproximately symmetrically to a plane surface, which passes through thefirst current electrode 2 at right angles to a straight line connectingthe also approximately assumed point-shaped sensor electrodes 4 and 5,namely the plan view of the second current electrode 3 shown in FIG. 10is axially symmetrical to a straight line XY, which passes through thefirst current electrode 2 at right angles to the straight lineconnecting the sensor electrodes 4 and 5.

The current-connecting contacts of the intergratable Hall element may bein part Schottky diode contacts, or may all be ohmic or metalliccontacts. The sensor-connecting contacts, however, can additionally benormal P/N diode contacts.

In FIG. 11, for example, the current-connecting contacts of the currentconnectors C'2 and C"2 are formed as ohmic or metallic contacts, thecurrent connecting contacts of the first current connector C1 is formedas a Schottky diode contact, and the sensor connecting contacts of thesensor connectors S1 and S2 are formed as P/N diode contacts. Theintegratable Hall element shown in FIG. 11 corresponds approximately tothe Hall element shown in FIG. 4, except that here the surface-likesecond current electrode 3 has been reduced to 2 distributed andapproximately point-like current electrodes 3a and 3b, which arespatially disposed where the two current-connecting contacts of thecurrent connectors C'2 and C"2 are located. The Hall element shown inFIG. 11 consequently comprises a semi-conductor layer 6 of a certainconductivity type, for example of the type N, on whose surface there arepresent five metallic connecting contacts 8, 9, 10, 11, and 12 of thecurrent connectors or sensor connectors C'2, S1, C1, S2, and C"2,respectively. Below both outer metallic connecting contacts 8 and 12,and in an intimate contact therewith there are disposed on the surfaceof the semiconductor layer 6 diffusion contacts 13 and 14 of the sameconductivity type as that of the semiconductor material, namely they arediffused thereinto, and are strongly doped with foreign atoms. Thecontact combinations 8;13 and 12;14 represent ohmic or metallic contactsand form each a distributed and approximately point-shaped secondcurrent electrode 3a or 3b having respective current connectors C'2 orC"2. The center of the metallic connecting contact 10 does not have anydiffusion-contact, therefore represents a Schottky diode contact, andforms the first current electrode 2 with the first current connector C1.Below the two remaining metallic connecting contacts 9 and 11 thereremain in the semiconductor layer 6 on its surface diffusion contacts 15and 16, respectively, which are of an opposite conductivity type thanthat of the semi-conductor layer 6. The contact combinations 9;15 and11;16 represent P/N diode contacts, and form each a sensor electrode 4or 5 with respective sensor connectors S1 or S2. The surface of thesemiconductor layer 6 is covered completely with a thin electricallyinsulating passivation layer 17, for example comprises SiO₂ which inturn, is facultatively or optionally completely covered with anelectrically well conducting "gate" 18 of metal or polysilicone, andwhere the passivation layer 17 and the "gate" 18 are formed withpassages for the connecting contacts. The "gate" 18 includes aconnecting contact 19 for the gate connection G. The "gate" 18 and themetallic connecting contacts 8 through 12 are electrically insulatedfrom one another. Through the gate connector G there is applied onto theconducting contact 19 of the "gate" 18 an electrical voltage, which mayserve to control the sensitivity of the Hall element.

The current distribution within the Hall element shown in FIG. 11 isillustrated in cross-section in FIG. 12, and in plan view in FIG. 13.The electrical currents pass both in cross-section as well as in planview from the approximately point-shaped current electrodes 3a and 3b soas to initially diverge in an arcuate manner, but finally converge in anarcuate manner towards the first current electrode 2.

The Hall element shown in FIG. 14 corresponds approximately to the Hallelement shown in FIG. 11, with the exception that here the passivationlayer 17 and the "gate" 18 have been omitted, all connecting contactshave been shown only schematically as pure ohmic or metallic contacts,so that the central metallic connector contact 10 is also formed with adiffusion-contact. All five diffusion contacts 13, 15, 20, 16, and 14shown in FIG. 14 are strongly doped with foreign atoms, and are all ofthe same conductivity type as the semiconductor layer 6. The Hallelement shown in FIG. 14 is additionally surrounded laterally in ananullar manner completely by an insulating or barrier layer 21, which isdeeply diffused into the surface of the semiconductor layer 6 and has anannular longitudinal shape. The insulating layer 21 comprises, forexample, material having an opposite conductivity type from that of thesemiconductor layer 6, in the present example therefore is of the typeP, and has a connecting contact with a wire connector W disposed in anarbitrary location. The insulating layer 21 surrounds in practice alwaysat least the first current electrode 2, namely here the contactcombination 10;20, and both sensor electrodes 4 and 5, namely here thecontact combinations 9;15 and 11;16. The center of thelongitudinal-annular insulation layer 21 is formed approximately by thefirst current electrode 2. Its longitudinal axis extends approximatelyparallel to the straight connecting line of the sensor electrodes 4 and5. Its depth exceeds considerably the depth of the contact region of theconnecting contacts. The insulating layer 21 is disposed so as to beaxially symmetrical to a straight line which passes through the firstcurrent electrode 2 at right angles to the surface of the semiconductorlayer 6, or is symmetrical to a plane surface which extends through thefirst current electrode 2 at right angles to the straight lineconnecting the sensor electrodes 4 and 5. The insulating layer 21, inturn, as shown in FIG. 14, is surrounded additionally by an electricallywell conducting equipotential diffusion layer 22 spaced therefrom, thediffusion layer 22 being continuous, annularly shaped, thin, andstrongly doped with foreign atoms. The diffusion layer 22 comprisesmaterial of the same conductivity type as the semiconductor layer 6, andalso has a connecting contact at an arbitrary location provided with awire connection denoted by the letter R. The semiconductor layer 6 is,in CMOS technology, either a N-substrate, or a N-well, which is duffusedinto a substrate of opposite conductivity type weakly doped with foreignatoms. The two approximately point-shaped contact combinations 8;13 and12;14, as well as the equipotential-diffusion layer 22 are atdistributed current electrodes, which together form the second currentelectrode 3. In practice also only the contact combinations 8;13 and12;14, or only the equipotential-diffusion layer 22 can be present as asecond current electrode 3. The equipotential-diffusion layer 22 forms acontinuous surface and is disposed on the upper surface of thesemiconductor layer 6. In any case it surrounds completely or partiallyin an annular manner at least the first current electrode 2 and bothsensor electrodes 4 and 5, and wherein the first current electrode 2 isdisposed at least approximately in the center of the annular surface.

The current distribution within the Hall element shown in FIG. 14without, however, any equipotential diffusion layer 22, is shown incross-section in FIG. 15, and in plan view in FIG. 16. It has beenassumed that the distributed point-like current electrodes 3a and 3b aredisposed external to the insulating layer 21, in contrast to theillustration shown in FIG. 14. The electric currents pass, as seen incross-section of FIG. 15, emanating from both current electrodes 3a and3b, so as to pass in depth downwardly around the deep insulation layer21, and reach the first current electrode 2 in an almost vertical mannerpassing upwardly from below. In the plan view of FIG. 16 no surfacecurrents can be seen to pass, as such a passage has been prevented bythe insulating layer 21.

The current distribution of the Hall element shown in FIG. 14 in theabsence of any insulating layer 21, and in the absence of anydistributed point-shaped current electrodes 3a and 3b is shown incross-section in FIG. 17, and in plan view in FIG. 18. The currentdistribution in cross-section is similar to that in FIG. 12, while inthe plan view all currents radiate symmetrically radially from theequipotential diffusion layer 22, assumed to be rectangular, to thefirst current electrode 2.

The current distribution within the Hall element shown in FIG. 14, inthe absence of any distributed point-shaped current electrodes 3a and3b, is shown in cross-section in FIG. 19, and in plan view in FIG. 20.The current distribution in cross-section of FIG. 19 is similar to thatof FIG. 15. If the length of the first current electrode 2 hasapproximately the same magnitude as the very small width of the annularlongitudinal equipotential diffusion layer 22 and is disposed parallelto that width, then, as seen in plan view of FIG. 20, all currents passat a depth in the semi-conductor layer 6 and are therefore shown dotted,being more or less parallel to the equipotential diffusion layer 22,namely they always emanate therefrom passing towards to the firstcurrent electrode 2. In that case both sensor electrodes 4 and 5 havepreferably also a longitudinal and similar shape to that of the firstcurrent electrode 2.

The Hall element 23 of FIG. 14 is to be connected into a circuit asshown in FIG. 21. This means that the central first current electrode 2is connected externally to a pole of a current source 24, and the otherpole of the current source 24, is, for example, connected to a negativepole V_(SS) of a voltage source, while the equipotential diffusion layer22 is connected directly, and both distributed current electrodes 3a and3b are connected through resistors R1 and R2, respectively, to the otherpole V_(DD) of the voltage source. The insulation layer 21 is connectedto an electrical voltage V_(W), which is so selected that duringoperation the P/N junction of the semi-conductor layer 6 to the layer 21has a polarity to inhibit operation (i.e., reverse bias) andconsequently is more negative than the Voltage V_(C1) applied to thefirst current electrode 2. The voltage V_(W) of the insulating layer 21may serve to control the sensitivity of the Hall element 23. If thesemi-conductor layer 6 comprises Si, then the insulating layer 21 may bemade from SiO₂, and does not require any wire connection W.

The integratable Hall element 25 of FIG. 22 corresponds approximately tothe integratable Hall element 23 of FIG. 14, except that thesemiconductor layer 6 has been grown as an epitaxial layer on asubstrate 26 of an opposite conductivity type, namely of the type P,that no equipotential diffusion layer 22 exists, and that thelongitudinal annular insulation layer 21 is strongly doped with foreignatoms, and is diffused at a depth up to the contact with the substrate26. Furthermore, below the active portion 7 the Hall element 25, at theborder between the substrate 26 and the semiconductor layer 6, andparallel to the surface of the semiconductor layer 6, there is embeddedin the semiductor layer 6 well-conducting "buried layer" 27 of the sameconductivity type as that of the semiconductor layer 6, which isstrongly doped with foreign atoms. Furthermore the two distributed andapproximately point-shaped current electrodes 3a and 3b can befacultatively or optionally extended in depth downwardly up to thecontact with the "buried layer" 27. The buried layer 27, together withthe two distributed and approximately point-shaped current electrodes 3aand 3b, forms the second current electrode 3, whose connecting contact,if no contact occurs between the point-shaped current electrodes 3a and3b of the buried layer 27, is disposed in a non-illustrated andelectrically insulated manner externally to the active portion 7 of theHall element 25 on the surface of the semiconductor layer 6, and isfurthermore connected to the semiconductor layer 6 therewithin throughan electrically ohmic or metallic, and more or less well conductingconnection.

The circuit connections to the integratable Hall element 25 of FIG. 22are similar to those of the Hall element 23 of FIG. 14, the wireconnection R being missing, however, while the connection W in thestated conductivity type P is connected to the negative pole V_(SSe) ofthe voltage source.

The current distribution of the Hall element shown within FIG. 22, inthe absence of the two distributed point-shaped current electrodes 3aand 3b, is illustrated in cross-section in FIG. 23 and in top plan viewin FIG. 24. The currents, as seen in cross-section of FIG. 23, all flowconcentrically in a symmetric fashion, and in depth in thesemi-conductor layer 6, and emanate from the buried layer 27, which herehas the function of a second current electrode 3, so as to reach thepoint-shaped first current electrode 2. In the top plan view of FIG. 24the currents also flow in depth in the semi-conductor layer 6, thereforeshown dotted, in a symmetrically concentric manner, namely emanatingfrom the buried layer 27, so as to pass to, and reach the firstpoint-shaped current electrode 2.

OPERATION

If in the Hall element shown in FIG. 1, a current I flows throughcurrent connectors C1, C2, then, as is known, a Hall voltage arisesbetween the sensor connectors S1 and S2. If this Hall element is nowdeformed so that it assumes sequentially the shape according to FIG. 2and according to FIG. 3, then the operation of the Hall element does notchange in principle. Also its sensitivity remains approximately thesame. The Hall voltage between the sensor connectors S1 and S2 of theHall element shown in FIG. 3 is given by: ##STR1## wherein E_(H) is theelectrical Hall field, and d1 is a partial path of an arbitraryconnecting path between the sensor connectors S1 and S2. If, as shown inFIG. 3, the integration path, which connects the sensor connectors S1and S2 is chosen to be the semicircle D, (see FIG. 3), the center ofwhich is equal to the center point A, then equation (1) yields thevalue: ##STR2## wherein R_(H) ≃1/(q.n), wherein q is the elementarycharge, n the density of the majority charged carrier, t the thicknessof the Hall element, I the value of the current between the currentconnectors C1 and C2, and B=μH represents the value of the magneticinduction of the magnetic field H to be measured. Equation (2) isexactly equal to the equation, which applies for the Hall element shownin FIG. 1. It is an advantage of the Hall element shown in FIG. 3, thatit can be built in, according to FIG. 4, into a semiconductor layer ofan electrically insulated member of an integrated circuit.

The second current electrode 3 need not absolutely have the shape shownin FIG. 4. It further does not absolutely require a continuous surface,but may, for example, comprises several distributed and approximatelypoint-shaped current electrodes, which are formed with a connectingcontact, and which are spatially so arranged, that all currents flowingduring operation form a vectorial resultant current, which, at least inthe vicinity of the first current electrode, extends substantially atright angles to the surface of the semiconductor layer 6. At least aportion of the distributed current electrodes is, for example, arrangedfor this purpose pairwise in axial symmetry to a straight line, whichpasses through the first current electrode 2 at right angles to thesurface of the semiconductor layer 6. At least a portion of theremaining distributed current electrodes, which are not arranged to bein axial symmetry, are then arranged for this purpose pairwise andapproximately symmetrically with respect to a plane surface, whichextends through the first current electrode 2 at right angles to astraight connecting line between the sensor electrodes 4 and 5. Also,for example, all distributed current electrodes may be disposed pairwisein symmetry with respect to the aforementioned surface.

At least a portion of the distributed current electrodes can, forexample, form electrically well conducting, and continuous surfaceportions, which in turn are pairwise identical, and also aresymmetrically arranged with respect to the respective straight line, orto the respective plane surface, as the distributed point-shaped currentelectrodes, from which they are assembled. All surface portions are, forexample, arranged to extend parallel to the surface of the semiconductorlayer 6, or parallel surface portions all lie in one plane, or form alltogether a single continuous surface.

The second current electrode 3 comprises, for example, as seen in FIG.4, a single cylindrically-shaped continuous symmetrical surface, as seenin FIG. 9 of a single axially symmetric continuous surface, as seen inFIG. 10 of a single continuous surface, which is symmetrical, as seen inFIG. 11 of only two distributed and approximately point-shapedsymmetrically disposed current electrodes 3a and 3b, as seen in FIG. 14of two distributed, approximately point-shaped and symmetricallydisposed current electrodes 3a and 3b, and a continuous symmetricalequipotential diffusion layer 22, and as seen in FIG. 22 of twodistributed, approximately point-shaped and symmetrically disposedcurrent electrodes 3a, 3b, and a continuous symmetrically disposedburied layer 27 extending parallel to the surface.

All these arrangements of the second current electrode 3 lead to thefact, as can be already ascertained from FIGS. 5 through 8, FIGS. 12through 13, FIGS. 15 through 20, and FIGS. 23 through 24, and thecurrent distributions shown therein, that all electrical currents aredistributed symmetrically during operation, and more or less radiallybetween the first and second current electrodes 2 and 3, so that theirvectorial current resultant in the vicinity of the first currentelectrode 2 extends substantially at right angles to the surface of thesemiconductor layer 6.

All distributed surface portions or point-shaped current electrodes ofthe second current electrode 3 must be connected through an electricallymore or less well conducting connection with at least one connectingcontact, which then forms the second supply pole of the Hall element.

The electrically well conducting continuous surface portions andsurfaces of the second current electrode 3 comprise, for example, of asemiconductor material, which is strongly doped with foreign atoms, andis of the same current conductivity P or N as the semiconductor layer 6.

The semiconductor layer 6 is, for example in the bipolar technology anepitaxial layer, which has been grown on a substrate (see FIG. 2), oris, in the CMOS technology a well, which is diffused into a substrate,and wherein the substrate is of the opposite conductivity type from thatof the semiconductor layer 6. The semiconductor layer 6 comprises Si orof GaAs, and wherein the use of GaAs results in a higher sensitivity ofthe Hall element, and is doped approximately uniformly with foreignatoms.

The part of the semiconductor layer 6, which in the Hall element 23shown in FIG. 14 is disposed immediately external to the Hall elementproper, must be connected to a positive pole V_(DD) of the supplyvoltage of the highest electrical potential available in the integratedcircuit with the aid of the equipotential diffusion layer 22, accordingto FIG. 21, in the case of the conductivity type N, so that anyinterference between the Hall element 23 and the remainder of theintegrated circuit is avoided. In FIG. 22 the insulating layer 21 takesover this task, namely to insulate the Hall element 25 with respect tothe remainder of the intergrated circuit electrically.

It is additionally the object of the insulating layer 22 to transformthe current distributions in both FIGS. 14 and 21 in the active portion7 of the Hall element 23 or 25 from a rather radial hemisphericaldistribution, into a radial-cylindrical distribution as shown, forexample, in FIG. 20, and wherein the small height of theradial-cylindrical current distribution lends that current distributiona disc-shaped appearance, which benefits the sensitivity of the Hallelement 23 or 25.

The use of the resistors R1 and R2 shown in FIG. 21 is facultative, oroptional, and their values are to be selected to be relatively small,for example approximately equal to 1 kOhm. They can be used so as tocancel any offset voltage.

The gate "18" of the Hall element shown in FIG. 1 with a voltage appliedto the gate connector G stablizes the surface properties, and thereforethe characteristics of the Hall element, reduces its surface-relatednoise, and improves its sensitivity.

The integratable Hall element serves for the measurement of a magneticfield component acting parallel to its surface at a correspondingspatial arrangement of a magnetic field acting parallel to its surface.This has the advantage that the magnetic field cannot induce in thecurrent paths extending parallel to the surface of the integratedcircuit any voltages falsifying or disturbing the measurement result.The Hall element is, for example, a part of an electricity counter, andthe magnetic field is, for example generated by the current to bemeasured.

The use of a standard bipolar, or standard CMOS technology has theadvantage, that a desired change in the properties of the Hall element,for example an improvement of its sensitivity, does not require anychanges of the thickness of the layer extending at right angles to thesurface of the Hall element, but only a change in the width of thelayers, namely a change of the mask.

I wish it to be understood that I do not desire to be limited to theexact details of construction shown and described, for obviousmodifications will occur to a person skilled in the art.

Having thus described the invention, what I claim as new and desire tobe secured by Letters Patent, is as follows:
 1. An integratable Hallelement comprising:a semiconductor layer having a major surface andhaving a thickness; first and second sensor electrodes spaced apart fromeach other and at the major surface for deriving an electric Hallvoltage between said first and second sensor electrodes; a first currentelectrode at the major surface and located substantially at the midpointof a straight line connecting said first and said second sensorelectrodes, the part of said semiconductor layer disposed below saidfirst current electrode and said first and second sensor electrodesforming an active portion of said Hall element; a plurality ofadditional current electrodes spaced away from said first currentelectrode, wherein said additional current electrodes are disposedapproximately symmetrically about an axis which passes through saidfirst current electrode at approximately a right angle to said majorsurface, and wherein at least some of said additional current electrodesare each defined by at least one relatively large electricallyconducting surface portion symmetrically disposed about said axis; atleast one electrically insulated connecting contact disposed on saidmajor surface exteriorly of said active portion; and at least oneelectric ohmic conducting connection; the thickness of saidsemiconductor layer being greater than the distance between said firstand second sensor electrodes for enabling electrical currents to flowbetween said first current electrode and said additional currentelectrode along paths extending deeply into said semiconductor layer sothat sufficient portions of the paths of the electrical currents aresubstantially perpendicular to the major surface below said firstcurrent electrode to provide said Hall element with sensitivity to amagnetic field component substantially parallel to the major surface;said relatively large electrically conducting surface portion being aburied layer disposed substantially parallel to said major surface insaid semiconductor layer below said active portion of said Hall element,said one electric ohmic conducting connection connecting said connectingcontact with said buried layer; said semiconductor layer being of afirst conductivity type; and said buried layer and said conductingconnection being comprised of a strongly doped semiconductor materialwhich is of the same conductivity type as said semiconductor layer. 2.An integratable Hall element comprising:a semiconductor layer having amajor surface and having a thickness; first and second sensor electrodesspaced apart from each other and at the major surface for deriving anelectric Hall voltage between said first and second sensor electrodes; afirst current electrode at the major surface and located substantiallyat the midpoint of a straight line connecting said first and said secondsensor electrodes, the part of said semiconductor layer disposed belowsaid first current electrode and said first and second sensor electrodesforming an active portion of said Hall element; a plurality ofadditional current electrodes spaced away from said first currentelectrode, wherein said additional current electrodes are disposedapproximately symmetrically about a plane surface which passes throughsaid first current electrode at approximately a right angle to the lineconnecting said first and second sensor electrodes, and wherein at leastsome of said additional current electrodes are each defined by at leastone relatively large electrically conducting surface portionsymmetrically disposed about said plane surface; at least oneelectrically insulated connecting contact disposed on said major surfaceexteriorly of said active portion; and at least one electric ohmicconducting connection; the thickness of said semiconductor layer beinggreater than the distance between said first and second sensorelectrodes for enabling electrical currents to flow between said firstcurrent electrode and said additional current electrodes along pathsextending deeply into said semiconductor layer so that sufficientportions of the paths of the electrical currents are substantiallyperpendicular to the major surface below said first current electrode toprovide said Hall element with sensitivity to a magnetic field componentsubstantially parallel to the major surface; said relatively largeelectrically conducting surface portion being a buried layer disposedsubstantially parallel to said major surface in said semiconductor layerbelow said active portion of said Hall element, said one electric ohmicconducting connection connecting said connecting contact with saidburied layer; said semiconductor layer being of a first conductivitytype; and said buried layer and said conducting connection beingcomprised of a strongly doped semiconductor material which is of thesame conductivity type as said semiconductor layer.
 3. An integratableHall element comprising:a semiconductor layer having a major surface andhaving a thickness; first and second sensor electrodes spaced apart fromeach other and at the major surface for deriving an electric Hallvoltage between said first and second sensor electrodes; a first currentelectrode at the major surface and located substantially at the midpointof a straight line connecting said first and said second sensorelectrodes, the part of said semiconductor layer disposed below saidfirst current electrode and said first and second sensor electrodesforming an active portion of said Hall element; a plurality ofadditional current electrodes spaced away from said first currentelectrode, wherein at least some of said additional current electrodesforming a first group of electrodes are disposed approximatelysymmetrically about an axis which passes through said first currentelectrode at approximately a right angle to said major surface, andwherein the remaining of said additional current electrodes forming asecond group of electrodes are disposed approximately symmetricallyabout a plane surface which passes through said first current electrodeat approximately a right angle to the line connecting said first andsecond sensor electrodes; at least one electrically insulated connectingcontact disposed on said major surface exteriorly of said activeportion; and at least one electric ohmic conducting connection; at leastsome of said additional current electrodes of one of said both groups ofelectrodes being each defined by at least one relatively largeelectrically conducting surface portion symmetrically disposed aboutsaid axis or said plane surface; the thickness of said semiconductorlayer being greater than the distance between said first and secondsensor electrodes for enabling electrical currents to flow between saidfirst current electrode and said additional current electrodes alongpaths extending deeply into said semiconductor layer so that sufficientportions of the paths of the electrical currents are substantiallyperpendicular to the major surface below said first current electrode toprovide said Hall element with sensitivity to a magnetic field componentsubstantially parallel to the major surface; said relatively largeelectrically conducting surface portion being a buried layer disposedsubstantially parallel to said major surface in said semiconductor layerbelow said active portion of said Hall element, said one electric ohmicconducting connection connecting said connecting contact with saidburied layer; said semiconductor layer being of a first conductivitytype; and said buried layer and said conducting connection beingcomprised of a strongly doped semiconductor material which is of thesame conductivity type as said semiconductor layer.
 4. An integratableHall element comprising:a semiconductor layer having a major surface andhaving a thickness; first and second sensor electrodes spaced apart fromeach other and at the major surface for deriving an electric Hallvoltage between said first and second sensor electrodes; a first currentelectrode at the major surface and located substantially at the midpointof a straight line connecting said first and said second sensorelectrodes; and a plurality of additional current electrodes spaced awayfrom said first current electrode, wherein said additional currentelectrodes are disposed approximately symmetrically about an axis whichpasses through said first current electrode at approximately a rightangle to said major surface, and wherein at least some of saidadditional current electrodes are each defined by at least onerelatively large electrically conducting surface portion symmetricallydisposed about said axis; the thickness of said semiconductor layerbeing greater than the distance between said first and second sensorelectrodes for enabling electrical currents to flow between said firstcurrent electrode and said additional current electrodes along pathsextending deeply into said semiconductor layer so that sufficientportions of the paths of the electrical currents are substantiallyperpendicular to the major surface below said first current electrode toprovide said Hall element with sensitivity to a magnetic field componentsubstantially parallel to the major surface; and said relatively largeelectrically conducting surface portion being formed in the shape of anannular equipotential diffusion layer at said major surface so as tosurround at least said first current electrode and said first and secondsensor electrodes, said first current electrode being disposedapproximately in the center of said annular equipotential diffusionlayer.
 5. An integratable Hall element comprising:a semiconductor layerhaving a major surface and having a thickness; first and second sensorelectrodes spaced apart from each other and at the major surface forderiving an electric Hall voltage between said first and second sensorelectrodes; a first current electrode at the major surface and locatedsubstantially at the midpoint of a straight line connecting said firstand said second sensor electrodes; and a plurality of additional currentelectrodes spaced away from said first current electrode, wherein saidadditional current electrodes are disposed approximately symmetricallyabout a plane surface which passes through said first current electrodeat approximately a right angle to the line connecting said first andsecond sensor electrodes, and wherein at least some of said additionalcurrent electrodes are each defined by at least one relatively largeelectrically conducting surface portion symmetrically disposed aboutsaid plane surface; the thickness of said semiconductor layer beinggreater than the distance between said first and second sensorelectrodes for enabling electrical currents to flow between said firstcurrent electrodes and said additional current electrodes along pathsextending deeply into said semiconductor layer so that sufficientportions of the paths of the electrical currents are substantiallyperpendicular to the major surface below said first current electrode toprovide said Hall element with sensitivity to a magnetic field componentsubstantially parallel to the major surface; and said relatively largeelectrically conducting surface portion being formed in the shape of anannular equipotential diffusion layer at said major surface so as tosurround at least said first current electrode and said first and secondsensor electrodes, said first current electrode being disposedapproximately in the center of said annular equipotential diffusionlayer.
 6. An integratable Hall element comprising:a semiconductor layerhaving a major surface and having a thickness; first and second sensorelectrodes spaced apart from each other and at the major surface forderiving an electric Hall voltage between said first and second sensorelectrodes; a first current electrode at the major surface and locatedsubstantially at the midpoint of a straight line connecting said firstand said second sensor electrodes; and a plurality of additional currentelectrodes spaced away from said first current electrode, wherein atleast some of said additional current electrodes forming a first groupof electrodes are disposed approximately symmetrically about an axiswhich passes through said first current electrode at approximately aright angle to said major surface, and wherein the remaining of saidadditional current electrodes forming a second group of electrodes aredisposed approximately symmetrically about a plane surface which passesthrough said first current electrode at approximately a right angle tothe line connecting said first and second sensor electrodes; at leastsome of said additional current electrodes of one of both groups ofelectrodes being each defined by at least one relatively largeelectrically conducting surface portion symmetrically disposed aboutsaid axis or said plane surface; the thickness of said semiconductorlayer being greater than the distance between said first and secondsensor electrodes for enabling electrical currents to flow between saidfirst current electrode and said additional current electrodes alongpaths extending deeply into said semiconductor layer so that sufficientportions of the paths of the electrical currents are substantiallyperpendicular to the major surface below said first current electrode toprovide said Hall element with sensitivity to a magnetic field componentsubstantially parallel to the major surface; and said relatively largeelectrically conducting surface portion being formed in the shape of anannular equipotential diffusion layer at said major surface so as tosurround at lest said first current electrode and said first and secondsensor electrodes, said first current electrode being disposedapproximately in the center of said annular equipotential diffusionlayer.
 7. The integratable Hall element as claimed in claim 1 or claim 2or claim 3 or claim 4 or claim 5 or claim 6, wherein at least some ofsaid first and said additional current electrodes and said sensorelectrodes are each defined as a surface portion comprising asemiconductor material, further comprising a connecting contact to eachof said first and said additional current electrodes and said sensorelectrodes, at least a part of each of said connecting contacts being ametallic contact disposed at said major surface and a diffusion contactbelow said metallic contact and in intimate contact with said metalliccontact, said diffusion contacts being strongly doped semiconductormaterial of the same conductivity type as that of said semiconductorlayer, said diffusion contacts being diffused into said semiconductorlayer.
 8. The integratable Hall element as claimed in claim 1 or claim 2or claim 3 or claim 4 or claim 5 or claim 6, wherein at least some ofsaid first and said additional current electrodes and said sensorelectrodes are each defined as a surface portion comprising a connectingcontact to each of said first and said additional current electrodes andsaid sensor electrodes, at least a part of each of said connectingcontacts to said first and said additional current electrodes being ametallic contact disposed at said major surface and in intimate contactwith said major surface.
 9. The integratable Hall element as claimed inclaim 1 or claim 2 or claim 3 or claim 4 or claim 5 or claim 6, whereinat least some of said first and said additional current electrodes andsaid sensor electrodes are each defined as a surface portion comprisinga connecting contact to each of said first and said additional currentelectrodes and said sensor electrodes, at least said connecting contactsto said sensor electrodes being a metallic contact disposed at saidmajor surface and a diffusion contact below said metallic contact and inintimate contact with said metallic contact, said diffusion contactsbeing semiconductor material of the opposite conductivity type as thatof said semiconductor layer, said diffusion contacts being diffused intosaid semiconductor layer.
 10. An integratable Hall element comprising:asemiconductor layer having a major surface and having a thickness; firstand second sensor electrodes spaced apart from each other and at themajor surface for deriving an electric Hall voltage between said firstand second sensor electrodes; a first current electrode at the majorsurface and located substantially at the midpoint of a straight lineconnecting said first and said second sensor electrodes; a plurality ofadditional current electrodes spaced away from said first currentelectrode, wherein said additional current electrodes are disposedapproximately symmetrically about an axis which passes through saidfirst current electrode at approximately a right angle to said majorsurface, and wherein at least some of said additional current electrodesare each defined by at least one relatively large electricallyconducting surface portion symmetrically disposed about said axis; andan annular barrier zone being diffused to a predetermined first depthinto said major surface; the thickness of said semiconductor layer beinggreater than the distance between said first and second sensorelectrodes for enabling electrical currents to flow between said firstcurrent electrode and said additional current electrodes along pathsextending deeply into said semiconductor layer so that sufficientportions of the paths of the electrical currents are substantiallyperpendicular to the major surface below said first current electrode toprovide said Hall element with sensitivity to a magnetic field componentsubstantially parallel to the major surface; said relatively largeelectrically conducting surface portion being formed in the shape of anannular equipotential diffusion layer at said major surface; and saidannular barrier zone surrounding at least said first current electrodeand said first and second sensor electrodes and being surrounded itselfby said annular equipotential diffusion layer, said first currentelectrode being approximately located at the center of said annularequipotential diffusion layer and of said annular barrier zone.
 11. Anintegratable Hall element comprising:a semiconductor layer having amajor surface and having a thickness; first and second sensor electrodesspaced apart from each other and at the major surface for deriving anelectrical Hall voltage between said first and second sensor electrodes;a first current electrode at the major surface and located substantiallyat the midpoint of a straight line connecting said first and said secondsensor electrodes; a plurality of additional current electrodes spacedaway from said first current electrode, wherein said additional currentelectrodes are disposed approximately symmetrically about a planesurface which passes through said first current electrode atapproximately a right angle to the line connecting said first and secondsensor electrodes, and wherein at least some of said additional currentelectrodes are each defined by at least one relatively largeelectrically conducting surface portion symmetrically disposed aboutsaid plane surface; and an annular barrier zone being diffused to apredetermined first depth into said major surface; the thickness of saidsemiconductor layer being greater than the distance between said firstand second sensor electrodes for enabling electrical currents to flowbetween said first current electrode and said additional currentelectrodes along paths extending deeply into said semiconductor layer sothat sufficient portions of the paths of the electrical currents aresubstantially perpendicular to the major surface below said firstcurrent electrode to provide said Hall element with sensitivity to amagnetic field component substantially parallel to the major surface;said relatively large electrically conducting surface portion beingformed in the shape of an annular equipotential diffusion layer at saidmajor surface; said annular barrier zone surrounding at least said firstcurrent electrode and said first and second sensor electrodes and beingsurrounded itself by said annular equipotential diffusion layer, saidfirst current electrode being approximately located at the current ofsaid annular equipotential diffusion layer and of said annular barrierzone.
 12. An integratable Hall element comprising:a semiconductor layerhaving a major surface and having a thickness; first and second sensorelectrodes spaced apart from each other and at the major surface forderiving an electric Hall voltage between said first and second sensorelectrodes; a first current electrode at the major surface and locatedsubstantially at the midpoint of a straight line connecting said firstand said second sensor electrodes; a plurality of additional currentelectrodes spaced away from said first current electrode, wherein atleast some of said additional current electrodes forming a first groupof electrodes are disposed approximately symmetrically about an axiswhich passes through said first current electrode at approximately aright angle to said major surface, and wherein the remaining of saidadditional current electrodes forming a second group of electrodes aredisposed approximately symmetrically about a plane surface which passesthrough said first current electrode at approximately a right angle tothe line connecting said first and second sensor electrodes; and anannular barrier zone being diffused to a predetermined first depth intosaid major surface; at least some of said additional current electrodesof one of both groups of electrodes being each defined by at least onerelatively large electrically conducting surface portion symmetricallydisposed about said axis or said plane surface; the thickness of saidsemiconductor layer being greater than the distance between said firstand second sensor electrodes for enabling electrical currents to flowbetween said first current electrode and said additional currentelectrodes along paths extending deeply into said semiconductor layer sothat sufficient portions of the paths of the electrical currents aresubstantially perpendicular to the major surface below said firstcurrent electrode to provide said Hall element with sensitivity to amagnetic field component substantially parallel to the major surface;said relatively large electrically conducting surface portion beingformed in the shape of an annular equipotential diffusion layer at saidmajor surface; and said annular barrier zone surrounding at least saidfirst current electrode and said first and second sensor electrodes andbeing surrounded itself by said annular equipotential diffusion layer,said first current electrode being approximately located at the centerof said annular equipotential diffusion layer and of said annularbarrier zone.
 13. The integratable Hall element as claimed in claim 4 orclaim 5 or claim 6 or claim 10 or claim 11 or claim 12, wherein saidsemiconductor layer is of a first conductivity type, and said annularequipotential diffusion layer is comprised of a strongly dopedsemiconductor material which is of the same conductivity type as saidsemiconductor layer.
 14. An integratable Hall element comprising:asemiconductor layer having a major surface and having a thickness; firstand second sensor electrodes spaced apart from each other and at themajor surface for deriving an electric Hall voltage between said firstand second sensor electrodes; a first current electrode at the majorsurface and located substantially at the midpoint of a straight lineconnecting said first and said second sensor electrodes; a plurality ofadditional current electrodes spaced away from said first currentelectrode, wherein said additional current electrodes are disposedapproximately symmetrically about an axis which passes through saidfirst current electrode at approximately a right angle to said majorsurface; and an annular barrier zone being diffused to a predeterminedfirst depth into said major surface and surrounding at least said firstcurrent electrode and said first and second sensor electrodes, saidfirst current electrode being approximately located at the center ofsaid annular barrier zone; the thickness of said semiconductor layerbeing greater than the distance between said first and second sensorelectrodes for enabling electrical currents to flow between said firstcurrent electrode and said additional current electrodes along pathsextending deeply into said semiconductor layer so that sufficientportions of the paths of the electrical currents are substantiallyperpendicular to the major surface below said first current electrode toprovide said Hall element with sensitivity to a magnetic field componentsubstantially parallel to the major surface.
 15. An integratable Hallelement comprising:a semiconductor layer having a major surface andhaving a thickness; first and second sensor electrodes spaced apart fromeach other and at the major surface for deriving an electric Hallvoltage between said first and second sensor electrodes; a first currentelectrode at the major surface and located substantially at the midpointof a straight line connecting said first and second sensor electrodes;and a plurality of additional current electrodes spaced away from saidfirst current electrode, wherein said additional current electrodes aredisposed approximately symmetrically about a plane surface which passesthrough said first current electrode at approximately a right angle tothe line connecting said first and second sensor electrodes; and anannular barrier zone being diffused to a predetermined first depth intosaid major surface and surrounding at least said first current electrodeand said first and second sensor electrodes, said first currentelectrode being approximately located at the center of said annularbarrier zone; the thickness of said semiconductor layer being greaterthan the distance between said first and second sensor electrodes forenabling electrical currents to flow between said first currentelectrode and said additional current electrodes along paths extendingdeeply into said semiconductor layer so that sufficient portions of thepaths of the electrical currents are substantially perpendicular to themajor surface below said first current electrode to provide said Hallelement with sensitivity to a magnetic field component substantiallyparallel to the major surface.
 16. An integratable Hall elementcomprising:a semiconductor layer having a major surface and having athickness; first and second sensor electrodes spaced apart from eachother and at the major surface for deriving an electric Hall voltagebetween said first and second sensor electrodes; a first currentelectrode at the major surface and located substantially at the midpointof a straight line connecting said first and said second sensorelectrodes; and a plurality of additional current electrodes spaced awayfrom said first current electrode, wherein at least some of saidadditional current electrodes forming a first group of electrodes aredisposed approximately symmetrically about an axis which passes throughsaid first current electrode at approximately a right angle to saidmajor surface, and wherein the remaining of said additional currentelectrodes forming a second group of electrodes are disposedapproximately symmetrically about a plane surface which passes throughsaid first current electrode at approximately a right angle to the lineconnecting said first and second sensor electrodes; an annular barrierzone being diffused to a predetermined first depth into said majorsurface and surrounding at least said first current electrode and saidfirst and second sensor electrodes, said first current electrode beingapproximately located at the center of said annular barrier zone; thethickness of said semiconductor layer being greater than the distancebetween said first and second sensor electrodes for enabling electricalcurrents to flow between said first current electrode and saidadditional current electrodes along paths extending deeply into saidsemiconductor layer so that sufficient portions of the paths of theelectrical currents are substantially perpendicular to the major surfacebelow said first current electrode to provide said Hall element withsensitivity to a magnetic field component substantially parallel to themajor surface.
 17. The integratable Hall element as claimed in claim 10or claim 11 or claim 12 or claim 14 or claim 15 or claim 16, whereinsaid semiconductor layer is of a first conductivity type and whereinsaid annular barrier zone is a semiconductor material of a conductivitytype opposite to that of said semiconductor layer.
 18. The integratableHall element as claimed in claim 10 or claim 11 or claim 12 or claim 14or claim 15 or claim 16, wherein said annular barrier zone has anannular longitudinal shape, whose longitudinal axis extendsapproximately parallel to said straight line connecting said first andsecond sensor electrodes.
 19. The integratable Hall element as claimedin claim 10 or claim 11 or claim 12 or claim 14 or claim 15 or claim 16,wherein at least some of said first and said additional currentelectrodes and said sensor electrodes are each defined as a surfaceportion comprising a semiconductor material, further comprising aconnecting contact to each of said first and said additional currentelectrodes and said sensor electrodes, at least a part of each of saidconnecting contacts being a metallic contact disposed at said majorsurface and a diffusion contact below said metallic contact and inintimate contact with said metallic contact, said diffusion contactsbeing strongly doped semiconductor material of the same conductivitytype as that of said semiconductor layer, said diffusion contacts beingdiffused into said semiconductor layer to a predetermined second depth,said predetermined first depth exceeding said predetermined seconddepth.
 20. The integratable Hall element as claimed in claim 10 or claim11 or claim 12 or claim 14 or claim 15 or claim 16, wherein at leastsome of said first and said additional current electrodes and saidsensor electrodes are each defined as a surface portion comprising aconnecting contact to each of said first and said additional currentelectrodes and said sensor electrodes, at least a part of each of saidconnecting contacts to said first and said additional current electrodesbeing a metallic contact disposed at said major surface and in intimatecontact with said major surface.
 21. The integratable Hall element asclaimed in claim 10 or claim 11 or claim 12 or claim 14 or claim 15 orclaim 16, wherein at least some of said first and said additionalcurrent electrodes and said sensor electrodes are each defined as asurface portion comprising a connecting contact to each of said firstand said additional current electrodes and said sensor electrodes, atleast said connecting contacts to said sensor electrodes being ametallic contact disposed at said major surface and a diffusion contactbelow said metallic contact and in intimate contact with said metalliccontact, said diffusion contacts being semiconductor material of theopposite conductivity type as that of said semiconductor layer, saiddiffusion contacts being diffused into said semiconductor layer to apredetermined second depth, said predetermined first depth exceedingsaid predetermined second depth.
 22. The integratable Hall element asclaimed in claim 10 or claim 11 or claim 12 or claim 14 or claim 15 orclaim 16, wherein said Hall element has a controllable sensitivity andwherein said barrier zone has a connecting contact adapted to have anelectrical voltage applied thereto, the polarity of said electricalvoltage being selectable to reverse bias of the P/N junction formed bysaid semiconductor layer and said annular barrier zone, said electricalvoltage being selectable to control said sensitivity.
 23. Theintegratable Hall element as claimed in claim 1 or claim 2 or claim 3 orclaim 4 or claim 5 or claim 6 or claim 10 or claim 11 or claim 12 orclaim 14 or claim 15 or claim 16, wherein said major surface issubstantially covered with an electrically conducting gate layer, saidelectrically conducting gate layer being provided with a connectingcontact, and a thin electrically insulating passivation layer separatingsaid gate layer from said semiconductor layer.